SIZF920DT-T1-GE3 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:2 N-Channel (Dual), Schottky
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
• Rds On (Max) @ Id, Vgs:3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 250µA, 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V, 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:1300pF @ 15V, 5230pF @ 15V
• Power - Max:3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PowerPair® (6x5)