NCD57201DR2G Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• Technology:Capacitive Coupling
• Number of Channels:1
• Voltage - Isolation:1000Vrms
• Common Mode Transient Immunity (Min):100kV/µs
• Propagation Delay tpLH / tpHL (Max):110ns, 110ns
• Pulse Width Distortion (Max):25ns
• Rise / Fall Time (Typ):13ns, 8ns
• Current - Output High, Low:1.9A, 2.3A
• Current - Peak Output:1.9A, 2.3A
• Voltage - Forward (Vf) (Typ):-
• Current - DC Forward (If) (Max):-
• Voltage - Output Supply:0V ~ 20V
• Operating Temperature:-40°C ~ 125°C
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOIC
• Approval Agency:VDE