Infineon's 1200V CoolSiC™ MOSFET M1H Easy module series has officially launched a variety of products. Let's delve into the specifics below.
I. CoolSiC™ MOSFET M1H Enhanced Technology: Where does the "Power" Lie?
The enhanced CoolSiC™ MOSFET M1H technology significantly improves the on-state resistance, expands the voltage range between the gate and source, enhancing drive flexibility. It offers the following four key advantages:
1. The Rds(on) of the M1H series has seen a significant improvement, with the enhanced M1H reducing Rds(on) by 12% for the same chip area.
2. The gate-source voltage withstand range has been extended, with steady-state withstand values at -7~20V and transient withstand values at -10~23V. Recommended turn-on voltage is 15-18V, turn-off voltage is -5~0V.
3. The M1H series features a higher gate-source voltage threshold, significantly reducing the occurrence of false on-state during 0V turn-off, enhancing system stability.
4. The maximum junction temperature can reach 175°C, further enhancing power density.
Additionally, Infineon is the first semiconductor device manufacturer in the industry to specify the short-circuit capability of silicon carbide in the datasheet. Users can choose 18V Vgs to reduce Rds(on) or 15V Vgs for improved short-circuit capability.
The M1H series offers diverse chip sizes including 55mΩ, 33mΩ, and 13mΩ, providing more possibilities and flexibility when dealing with different Rds(on) combinations.
The enhanced performance of the M1H technology chips significantly minimizes the impact of dynamic switching processes on threshold and on-state resistance, ensuring better parameter stability.
II. Which CoolSiC™ MOSFET 1200V M1H Easy Modules has Infineon Launched?
Infineon's Easy modules are known for their scalability and flexibility. The Easy 1B and 2B modules have been on the market for years with widespread applications. To ensure designing higher power systems with the same module height, Infineon has further developed the Easy 3B and 4B modules. These packages offer higher power and current capabilities, utilizing 1200V CoolSiC™ MOSFET chips to better meet the requirements of emerging applications.
Currently, the 1200V CoolSiC™ MOSFET M1H Easy modules feature a variety of topologies including half-bridge, full-bridge, three-phase bridge, three-level, and boost. The Easy 3B module in half-bridge configuration boasts a minimum Rds(on) of 2mΩ.
III. Which High-Speed Switching Applications are Suitable for the 1200V CoolSiC™ MOSFET M1H Easy Modules?
The Easy modules are ideal for standardized and customized solutions across various industrial applications such as photovoltaics, electric vehicle charging stations, and ESS.
1. The F4-19MR20W3M1HF_B11 is the first 2000V CoolSiC™ MOSFET power module using the EasyPACK™ 3B package, suitable for 1500V photovoltaic systems. By using the 2000V DF4-19MR20W3M1HF_B11, a two-level structure can replace a three-level structure, resulting in a 1% boost efficiency improvement under light loads and an average efficiency increase of 0.5% under all operating conditions. This achieves a simpler solution, reduces the number of devices, enhances power density, and lowers the overall system cost of 1500VDC applications.
2. The 200V, 17mΩ full-bridge silicon carbide Easy module (F4-17MR12W1M1H) is suitable for 10-12kW charging station applications or bidirectional isolated converters. With an efficiency of up to 97.5%, it reduces passive component volume through high-frequency switching, simplifying installation and enhancing system reliability.
3. The 200V, 11mΩ T-type three-level silicon carbide Easy module (F3L11MR12W2M1HP_B19) enables bidirectional AC-DC conversion, suitable for bidirectional NPC2 topology and the AC-DC portion of 60kW charging stations.
4. The 200V, 4mΩ half-bridge silicon carbide Easy module (FF4MR12W2M1H(P)_B11) can be applied in parallel for high-power applications, achieving better current sharing performance and increasing system stability.
Customizable based on different topology and chip combinations as per customer requirements, the silicon carbide Easy modules offer a range of Rds(on) from 55mΩ to 2mΩ and various topology options. This product line will continue to expand to meet market demands.
IV. Conclusion
To meet the global demand for zero-carbon solutions and the rapidly growing need for Easy modules in the market, Infineon has initiated a new strategy, "Easy Modules for the world," for global expansion of production facilities. By establishing different backend factory lines in various regions to cater to local markets and requirements, this