Littelfuse has announced the launch of the IX4352NE low-side SiC MOSFET and IGBT gate driver. This innovative driver is specifically designed to drive silicon carbide (SiC) MOSFETs and high-power insulated gate bipolar transistors (IGBTs) in industrial applications.
IX4352NE Low-Side Gate Driver
The IX4352NE offers several key advantages, including its independent 9A sink/source current output, support for customizable turn-on and turn-off timing, and minimization of switching losses. The internal negative charge regulator also provides users with the option of negative gate drive bias to achieve higher dV/dt immunity and faster turn-off speeds. Operating within a voltage range of 35V (VDD - VSS), this driver offers exceptional flexibility and performance.
One of the standout features of the IX4352NE is its integrated internal negative charge pump regulator, eliminating the need for external auxiliary power devices or DC/DC converters. This feature is particularly useful for driving SiC MOSFETs during turn-off, saving valuable space typically required for external logic level converter circuits. The logic inputs are compatible with standard TTL or CMOS logic levels, further enhancing space-saving capabilities.
The IX4352NE is well-suited for driving SiC MOSFETs in various industrial applications, such as:
- Vehicle and non-vehicle chargers
- Power factor correction (PFC)
- DC/DC converters
- Motor controllers
- Industrial power inverters
Its outstanding performance makes it an ideal choice for demanding power electronic applications in the electric vehicle, industrial, alternative energy, smart home, and building automation markets.
With its comprehensive features, the IX4352NE simplifies circuit design and offers greater integration. Built-in protection features, including desaturation detection with soft turn-off gate drive, undervoltage lockout (UVLO), and thermal shutdown (TSD), ensure the protection of power devices and gate drivers. The integrated open-drain FAULT output signals the microcontroller in case of faults, enhancing safety and reliability. Additionally, the IX4352NE helps save valuable PCB space and increase circuit density, contributing to overall system efficiency.
Significant improvements over the existing IX4351NE include:
- Safety soft turn-off initiated by a desaturation event
- High-threshold precision thermal shutdown
- Operational capability of the charge pump during thermal shutdown
The new IX4352NE is pin-compatible and can seamlessly replace designs utilizing the existing Littelfuse IX4351NE, released in 2020.
“By introducing a new 9A sink/source current driver, the IX4352NE expands our extensive range of low-side gate drivers, simplifying the gate drive circuitry required for SiC MOSFETs,” said June Zhang, Product Manager at Littelfuse's Semiconductor Business Unit (SBU). “Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage, enhancing dV/dt immunity and turn-off speed. Consequently, this product can be used to drive any SiC MOSFET or power IGBT, whether Littelfuse devices or similar devices available in the market.”