It is reported that the Pohang Pohang Postech Institute of Nano Fusion Technology has signed a memorandum of agreement (MOA) with the German Fraunhofer Institute. The two parties will work together to develop a SiC MOSFET process platform, which will be used in aerospace, electric vehicles and energy and other industries.
At present, the project has received a total of 10 billion won in funding, of which 9 billion won is funded by the Korean government. The construction period is from 2023 to 2027, a period of five years, and the construction is led by Postech Nano Fusion Technology Research Institute.
It is worth mentioning that Pohang City in South Korea has been committed to the industrialization of SiC. In May last year, the city was selected as a competition project of the Ministry of Trade, Industry and Energy, and started to promote the introduction of core process equipment to support SiC based on 8-inch wide bandgap (WBG) materials for the full-cycle process of power semiconductors. In addition, the city is also implementing a localization project for silicon carbide production equipment.
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