MSC025SMA120J Specifications

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1.2 kV
• Current - Continuous Drain (Id) @ 25°C:77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:31mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id:2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:232 nC @ 20 V
• Vgs (Max):+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:3020 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):278W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:SOT-227 (ISOTOP®)
• Package / Case:SOT-227-4, miniBLOC