NVB190N65S3F Specifications

• Series:Automotive, AEC-Q101, SuperFET® III
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:5V @ 430µA
• Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:1605 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):162W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK-3 (TO-263)
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB