BSH111BKR Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):55 V
• Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Rds On (Max) @ Id, Vgs:4Ohm @ 200mA, 4.5V
• Vgs(th) (Max) @ Id:1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 4.5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):302mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB
• Package / Case:TO-236-3, SC-59, SOT-23-3