NP50P03YDG-E1-AY Specifications

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Rds On (Max) @ Id, Vgs:8.4mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta), 102W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-HSON
• Package / Case:8-SMD, Flat Lead Exposed Pad