DMW2013UFDEQ-13 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:10.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:11mOhm @ 8.5A, 4.5V
• Vgs(th) (Max) @ Id:1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:52.6 nC @ 8 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:2508 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):810mW (Ta)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:U-DFN2020-6 (SWP)
• Package / Case:6-UDFN Exposed Pad