BSS138-F169 Specifications

• 55b18700f05822c99215921d3c8583b7:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):50 V
• Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
• Vgs(th) (Max) @ Id:1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:27 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):360mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3 (TO-236)
• Package / Case:TO-236-3, SC-59, SOT-23-3