Renesas' 40nm MCUs use a process technology called the 40nm node. Based on this technology, Renesas' MCUs offer leading features and ultimate integration, as shown in the table below.
High-End 40nm MCU Features
-Performance: multi-core and higher computing frequency
-Lower power consumption: reduce power consumption by 50%
-Integrated: large capacity flash memory
-Reliability: up to 20 years of data retention
This process technology refers to the size of the transistors and interconnects used in manufacturing the MCU. Renesas' adoption of split-gate metal-oxide-silicon nitride-oxide-monocrystalline silicon (SG-MONOS) technology in its automotive microcontroller units (MCUs) has set it apart in the industry and brought Numerous advantages. With more than 30 years of experience in producing charge trapping non-volatile memories (NVM), Renesas has become a leader in providing solutions with superior functionality and reliability.
Renesas utilizes charge-trapping non-volatile memory (NVM) technology to achieve faster performance and integrates large-capacity flash memory into its MCUs. This technology enables efficient data storage and retrieval, reducing access times and improving system performance. Renesas also integrates large-capacity flash memory into its MCUs, reducing the need for external storage devices and enhancing the functionality of the MCU.
An outstanding advantage of 40nm process technology is its world-class high-speed random read performance, which makes Renesas at the forefront of the industry in this regard. The ability to access data quickly and efficiently is critical in many applications, and Renesas' 40nm MCUs provide unparalleled performance in this regard.
In addition, Renesas' 40nm process technology provides the fastest flash memory access speeds with no wait state, meaning data can be read and written quickly, improving system responsiveness and reducing latency. This advantage is particularly significant in real-time applications, where fast data access is critical for seamless operation.
Renesas' 40nm process technology also uses a discrete storage node architecture based on a charge trapping mechanism. This design ensures high reliability and scalability, allowing the MCU to withstand harsh operating conditions and adapt to evolving industry requirements. Renesas' MCUs enable low-power programming operations through the implementation of split-gate source-side hot electron injection (SSI) programming. This helps improve energy efficiency, reduce power consumption, and extend battery life in portable devices.
Renesas' 40nm technology brings significant advantages to a variety of industrial, consumer and automotive applications. Among them, some of the leading advantages include charge trapping NVM products, world-class high-speed random read performance, fastest flash memory access, high reliability, scalability and optimized circuit design. Renesas continues to advance MCU technology, and these advancements enable engineers to provide efficient solutions for design innovation in a variety of industries where performance, efficiency, and size are critical.